? auirf7207q 1 www.irf.com ? 2013 international rectifier april 30, 2013 hexfet? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicat ed in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the ther mal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperat ure (ta) is 25c, unless otherwise specified. automotive grade v dss -20v r ds(on) max 0.06 ? i d -5.4a parameter max. units v ds drain-to-source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -10v -5.4 a i d @ t a = 70c continuous drain current, v gs @ -10v -4.3 i dm pulsed drain current ? -43 p d @t a = 25c power dissipation 2.5 w p d @t a = 70c power dissipation 1.6 linear derating factor 0.02 w/c v gs gate-to-source voltage 12 v v gsm gate-to-source voltage single pulse tp<10s -16 v e as single pulse avalanche energy (thermally limited) ? 140 mj t j operating junction and -55 to + 150 c ? t stg storage temperature range ? so-8 top view 8 1 2 3 4 5 6 7 d d d g s a d s s ? features ? ? ? advanced process technology ? ? low on-resistance ? ? p-channel mosfet ? ? dynamic dv/dt rating ? ? 150c operating temperature ? ? fast switching ? ? fully avalanche rated ? ? lead-free, rohs compliant ? ? automotive qualified* description specifically designed for automoti ve applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achiev e low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. thermal resistance symbol parameter typ. max. units r ? ja junction-to-ambient ? ??? 50 c/w base part number package type standard pack orderable part number form quantity auirf7207q so-8 tube 95 auirf7207q tape and reel 2500 AUIRF7207QTR
? auirf7207q 2 www.irf.com ? 2013 international rectifier april 30, 2013 static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.011 ??? v/c reference to 25c, i d = -1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.06 ?? v gs = -4.5v, i d = -5.4a ? ??? ??? 0.125 v gs = -2.7v, i d = -2.7a ? v gs(th) gate threshold voltage -0.7 ??? -1.6 v v ds = v gs , i d = -250a gfs forward transconductance 8.3 ??? ??? s v ds = -10v, i d = -5.4a i dss drain-to-source leakage current ??? ??? -1.0 a v ds = -16v, v gs = 0v ??? ??? -25 v ds = -16v, v gs = 0v, t j = 125c i gss gate-to-source forw ard leakage ??? ??? -100 na v gs = 12v gate-to-source reverse leakage ??? ??? 100 v gs = -12v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions q g total gate charge ??? 15 22 nc i d = -5.4a q gs gate-to-source c harge ??? 2.2 3.3 v ds = -10v q gd gate-to-drain ("miller" ) charge ??? 5.7 8.6 v gs = -4.5v t d(on) turn-on delay time ??? 11 ??? ns v dd = -10v t r rise time ??? 24 ??? i d = -1.0a t d(off) turn-off delay time ??? 43 ??? r g = 6.0 ? t f fall time ??? 41 ??? r d = 10 ? c iss input capacitance ??? 780 ??? pf v gs = 0v c oss output capacitance ??? 410 ??? v ds = -15v c rss reverse transfer capacitance ??? 200 ??? ? = 1.0 mhz diode characteristics ??? ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? -3.1 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? -43 a integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? -1.0 v t j = 25c, i s = -3.1a, v gs = 0v ? dv/dt peak diode recovery ? ??? 5.0 ??? v/ns t j = 175c, i s = -3.1a, v ds = -20v t rr ? reverse recovery time ??? 42 63 ns t j = 25c, i f = -3.1a q rr reverse recovery charge ??? 50 75 nc di/dt = 100a/s notes: ?? repetitive rating; pulse width limited by max. junction temperature. ?? starting t j = 25c, l = 9.6mh, r g = 25 ? , i as = -5.4a. ?? i sd ? -5.4a, di/dt ? -79a/s, v dd ? v (br)dss , t j ? 150c. ?? pulse width ? 300s; duty cycle ? 2%. ?? when mounted on 1 inch square copper board, t<10 sec.
? auirf7207q 3 www.irf.com ? 2013 international rectifier april 30, 2013 fig. 2 typical output characteristics 1 10 100 0 400 800 1200 1600 - v , dr ain- to- sour ce voltag e ( v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c short ed gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss fig. 3 typical transfer characteristics 0 5 10 15 20 25 30 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for t est circuit see figure i = d 13 -5.4a v = -10v ds fig. 4 normalized on-resistance vs. temperature 1 10 100 2.0 3.0 4.0 5.0 6.0 v = -10v 20s pulse widt h ds - v , gate- to- sour ce voltag e ( v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig. 1 typical output characteristics fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 1 10 100 0.1 1 10 20s pulse width t = 25 c j top bottom vgs -7.00v -5.00v -4.50v -3.50v -3.00v -2.70v -2.50v -2.25v - v , dr ain- to- sour ce voltag e ( v) -i , drain-to-source current (a) ds d -2.25v 1 10 100 0.1 1 10 20s pulse width t = 150 c j top bottom vgs -7.00v -5.00v -4.50v -3.50v -3.00v -2.70v -2.50v -2.25v - v , dr ain- to- sour ce voltag e ( v) -i , drain-to-source current (a) ds d -2.25v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , juncti on temper atur e ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -5.4a
? auirf7207q 4 www.irf.com ? 2013 international rectifier april 30, 2013 ? 25 50 75 100 125 150 0 100 200 300 400 star ti ng t , juncti on temper atur e ( c) e , single pulse avalanche energy (mj) j as i d top bottom -2.4a -4.3a -5.4a fig 8. maximum safe operating area fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 t , case temper atur e ( c) -i , drain current (a) c d fig. 7 typical source-to-drain diode forward voltage fig 9. maximum drain current vs. case temperature 0.1 1 10 100 0.4 0.6 0.7 0.9 1.1 1.2 1.4 -v ,source-to-drai n voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a - v , dr ain- to- sour ce voltag e ( v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms fig 13. maximum effective transient thermal impedance, junction-to-case 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectang ul ar pul se dur ati on ( sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
? auirf7207q 5 www.irf.com ? 2013 international rectifier april 30, 2013 ? fig 14. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets fig 14a. unclamped inductive test circuit fig 14b. unclamped inductive waveforms fig 15a. switching time test circuit fig 15b. switching time waveforms fig 16a. gate charge test circuit fig 16b. gate charge waveform
? auirf7207q 6 www.irf.com ? 2013 international rectifier april 30, 2013 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ fo o tprin t 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. outline conforms to jedec outline ms-012aa. notes: 1. d im en sio n in g & to leran c in g per asm e y14.5m -1994. 2. controlling dim ension: m illim eter 3. dim ensions are shown in m illim eters [inches]. 5 dim ension does not include m old protrusions. 6 dim ension does not include m old protrusions. m o ld pro tru sio n s n o t to exc eed 0.25 [.010]. 7 dim ension is the length of lead for soldering to a su bstrate. m o ld pro tru sio n s n o t to exc eed 0.15 [.006]. 8x 1.78 [.070] e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 basic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters in c h es min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking
? auirf7207q 7 www.irf.com ? 2013 international rectifier april 30, 2013 qualification information ? ? qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. ir?s in- dustrial and consumer qualification leve l is granted by extension of the high- er automotive level. moisture sensitivity level so-8 msl1 esd machine model class m1b (+/- 100v) ?? aec-q101-002 human body model class h1a (+/- 500v) ?? aec-q101-001 charged device model class c5 (+/- 2000v) ?? aec-q101-005 rohs compliant yes ? qualification standards can be found at inte rnational rectifier?s web site: http//www.irf.com/ ?? highest passing voltage.
? auirf7207q 8 www.irf.com ? 2013 international rectifier april 30, 2013 ? important notice unless specifically designated for the automotive market, internatio nal rectifier corporation and it s subsidiaries (ir) reserve the right to make corrections, modifi cations, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirement s with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and c onditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specificat ions applicable at the time of sale in accordance with ir?s standard warranty. testing and other qualit y control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, te sting of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer prod ucts and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations , and notices. reproduction of this information with altera- tions is an unfair and deceptive business practice. ir is not re sponsible or liable for such altered documentation. infor- mation of third parties may be s ubject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the a ssociated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indem nify and hold international rectifier and its officers, em- ployees, subsidiaries, affiliates, and di stributors harmless against a ll claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any clai m of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was neg ligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are de- signed and manufactured to meet dla military specifications required by certain m ilitary, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the bu yer?s own risk and that they are solely re sponsible for compliance with all legal a nd regulatory requirements in connection with such use. ir products are neither designed nor intended for use in autom otive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designa- tion ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105
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